Hexagonal Boron Nitride

Hexagonal boron nitride (hBN) is a layered ceramic material with a graphite-like crystal structure, valued for its combination of electrical insulation, thermal conductivity, chemical stability, and mechanical strength. Within each layer, strong covalent bonds connect boron and nitrogen atoms, while weaker interlayer forces allow the material to be exfoliated into thin sheets; its wide electronic band gap limits charge transport while phonons carry heat. These properties make hBN useful in engineering as a thermally conductive electrical insulator, lubricant, dielectric layer, and protective coating. Its two-dimensional form also supports advanced electronics, optoelectronics, nanocomposites, and thermal-management systems.

Hexagonal Boron Nitride - Related Videos

Research

JoVE Journal - Chemistry
Free Sample

Low-energy Cathodoluminescence for (Oxy)Nitride Phosphors

0 Views •

Cited by 2 •

2016

An excellent chemical and luminescence stabilities of (oxy)nitride phosphors present it as an promising alternative to currently used sulfide and oxide phosphors. In this paper, we present the way to investigate its local luminescence properties using low-energy cathodoluminescence (CL).

Research

JoVE Journal - Engineering

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

0 Views •

Cited by 1 •

2025

This article traces the life cycle of a silicon nitride membrane resonator, from design through fabrication to characterization.

Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis

0 Views •

Cited by 5 •

2016

A protocol is described for the characterization of the key electrochemical parameters of a boron doped diamond (BDD) electrode and subsequent application for in situ pH generation experiments.

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

0 Views •

Cited by 13 •

2015

This paper details the fabrication process of a gate-tunable graphene device, decorated with Coulomb impurities for scanning tunneling microscopy studies. Mapping the spatially dependent electronic structure of graphene in the presence of charged impurities unveils the unique behavior of its relativistic charge carriers in response to a local Coulomb potential.

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

0 Views •

Cited by 1 •

2025

This article presents an optimized, experience-informed protocol for fabricating high-quality graphene-based moiré superlattice devices with precise twist angles, utilizing a modified dry transfer technique based on a highly tunable, custom-built transfer setup.

View All Results

FAQs

Related Topics