Reactive Ion Etching
Reactive Ion Etching - Related Videos
01:23
Reactivity of Enolate Ions
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2023
Enolate ions are formed by the acid–base reaction of a carbonyl compound with a base. This leads to deprotonation of the α hydrogen atom, leading to a resonance-stabilized enolate ion where one of the contributing structures is an oxyanion, which imparts additional stability. Therefore, the proton on the α carbon is more acidic in nature than that of other sp3-hybridized C–H bonds but less acidic than those in O–H bonds where the negative charge in the conjugate base is localized on the oxygen...
13:49
Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes
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Cited by 11 •
2020
We have shown that the etching of nano-architecture into intracortical microelectrode devices may reduce the inflammatory response and has the potential to improve electrophysiological recordings. The methods described herein outline an approach to etch nano-architectures into the surface of non-functional and functional single shank silicon intracortical microelectrodes.
06:58
Electrochemical Etching and Characterization of Sharp Field Emission Points for Electron Impact Ionization
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2016
A method for electrochemically etching field emission tips is presented. Etching parameters are characterized and the operation of the tips in field emission mode is investigated.
08:06
Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone
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2017
The protocol for a novel ion concentration polarization (ICP) platform that can stop the propagation of the ICP zone, regardless of the operating conditions is described. This unique ability of the platform lies in the use of merging ion depletion and enrichment, which are two polarities of the ICP phenomenon.
03:24
Common Ion Effect
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2020
Compared with pure water, the solubility of an ionic compound is less in aqueous solutions containing a common ion (one also produced by dissolution of the ionic compound). This is an example of a phenomenon known as the common ion effect, which is a consequence of the law of mass action that may be explained using Le Châtelier’s principle. Consider the dissolution of silver iodide: This solubility equilibrium may be shifted left by the addition of either silver(I) or iodide ions, resulting in...
FAQs
Two mechanisms act at the surface simultaneously. Chemically active plasma species react with the target material, while an applied electric field accelerates ions toward the surface, producing directional physical sputtering. Their combination enhances material removal compared with either mechanism alone, allowing engineers to form precise patterns while maintaining control over feature direction and surface processing.
Ion acceleration toward the surface gives the process a directional component, so material removal can be concentrated along the intended etch path rather than occurring equally in all directions. This directional behavior supports anisotropy, meaning differences in etching by direction. Engineers use this property when creating high-resolution patterns and microscale structures with controlled geometries.
Chemical species provide material-dependent reactions, while ion bombardment contributes physical sputtering and helps expose the surface to further chemical activity. The balance between these effects influences selectivity, which describes how preferentially the target material is removed, and anisotropy. Adjusting process conditions allows engineers to favor the removal behavior needed for a particular patterned structure.
Gas composition, chamber pressure, radio-frequency power, and etch time are the principal controllable variables identified for this process. Gas composition affects the available reactive species, while power influences ion acceleration and pressure changes the plasma environment. Together with elapsed time, these settings determine material removal, etch depth, selectivity, and directional precision.
The process begins by placing the material in a vacuum chamber and introducing reactive gases. Radio-frequency power forms a plasma from those gases, generating chemically active species and ions. An applied electric field then directs ions toward the surface, where chemical reactions and physical sputtering remove material. Engineers adjust gas conditions, pressure, power, and time to reach the intended depth.
This technique is useful when fabrication requires precise, high-resolution patterns rather than nonspecific surface removal. It supports semiconductor patterning, microelectromechanical systems fabrication, and advanced engineering research involving microscale structures. Its controllable selectivity, anisotropy, and etch depth make it relevant when device geometry and dimensional accuracy are important outcomes.
Engineers tune the final structure by changing gas composition, chamber pressure, radio-frequency power, and etch duration. These settings regulate the chemical activity and directional ion bombardment that drive material removal. Monitoring their combined effect helps control selectivity, anisotropy, and depth, allowing the same fabrication approach to support different pattern geometries and microscale device requirements.
The resulting etched surface reveals how effectively the selected conditions removed the target material and preserved the intended pattern. Key outcomes include etch depth, selectivity, and anisotropy, which indicate removal extent, material preference, and directional control. Evaluating these outcomes helps engineers refine process settings for semiconductor features, microsystems, or other high-resolution structures.