<p class="jove_content">The two-thermal annealing method enables the fabrication of thin films of type II semiconductor silicon clathrate. Post-synthesis treatments, including thermal pressing and reactive ion etching, were performed to improve the material properties. This approach provides an accessible pathway for fabricating tunable clathrate films suitable for next-generation electronic and photonic devices.</p>

fabrication-and-optimization-of-type-ii-silicon-clathrate-films

Institution - University of Strasbourg, CNRS (Centre National de la Recherche Scientifique)

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